Applied Physics Letters · 1996 · 110 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistrySemiconductor MaterialsThin FilmsDefects In Electronic MaterialsIon ImplantationRadiation Damage In MaterialsSemiconductor DefectsX-ray CrystallographyX-ray Photoelectron SpectroscopyBondingBonding DefectsBonding-induced DefectsImplantation-induced Defect FormationIon Implantation EffectsNear-edge X-ray Absorption Fine Structure SpectroscopyPulsed Laser DepositionX-ray Absorption Near Edge Structure
Near-edge x-ray absorption fine structure (NEXAFS) has been used to study the defect content and the bonding modifications induced in BN thin films by ion implantation. The initial films were hexagonal-like BN grown on Si(100) by pulsed laser deposition. Subsequent ion implantation with N2+ at 180 keV induces the formation of a significant proportion of sp3 bonding (cubic-like), and the formation of nitrogen void defects in the remaining sp2 BN. These modifications in the bonding of a film lacking long range order can only be distinguished with a local order technique like NEXAFS.