Kota Kawahara

Negative-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>U</mml:mi></mml:math>carbon vacancy in 4<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>H</mml:mi></mml:math>-SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site

Xuan Thang Trinh, Krisztián Szász, T. Hornos et al. · Physical Review B · 2013 · 51 citations · Full text

Semiconductors, Math Xmlns, Engineering +15

Major deep levels with the same microstructures observed in n-type 4H–SiC and 6H–SiC

S. Sasaki, Kota Kawahara, Giovanni Alfieri et al. · Journal of Applied Physics · 2011 · 49 citations

Materials Science, Materials Engineering, Semiconductor Technology +14

Diffraction microscopy using 20kV electron beam for multiwall carbon nanotubes

O. Kamimura, Kota Kawahara, Takahisa Doi et al. · Applied Physics Letters · 2008 · 32 citations · Full text

Materials Science, Diffraction Pattern, Engineering +15

10-kV diffractive imaging using newly developed electron diffraction microscope

O. Kamimura, T. Dobashi, Kota Kawahara et al. · Ultramicroscopy · 2009 · 27 citations

Electron Diffraction Microscope, Engineering, Electron Microscopy +4

Control of carbon vacancy in SiC toward ultrahigh-voltage power devices

Tsunenobu Kimoto, Kota Kawahara, Bernd Zippelius et al. · Superlattices and Microstructures · 2016 · 20 citations

Electrical Engineering, Engineering, Power Device +7