E. Giraud - Concepedia

Author

E. Giraud

École Polytechnique Fédérale de Lausanne

Also Known As

E Giraud, E. Giraud, Eduardo Giraud, Giraud, E.

Publications

254

Citations

H-Index

Concepts

All Affiliations

École Polytechnique Fédérale de Lausanne Centre National de la Recherche Scientifique Université Paris-Sud Normandie Université Institut National des Sciences Appliquées Rouen Normandie

About

E. Giraud is an author at École Polytechnique Fédérale de Lausanne specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	246
2	Applied Physics	7	7	246
3	Electrical Engineering	4	4	135
4	Natural Sciences	1	1	57
5	Materials Engineering	1	1	28

E. Giraud

Publications

246

Citations

H-Index

Page 1

	Year	Citations
Two-color GaN/AlGaN quantum cascade detector at short infrared wavelengths of 1 and 1.7 <i>μ</i>m S. Sakr, E. Giraud, A. Dussaigne, Applied Physics Letters PhotonicsElectrical EngineeringPhotoluminescenceActive Gan QuantumEngineering	2012	61
Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N Lorenzo Rigutti, Lorenzo Mancini, David Hernández‐Maldonado, Journal of Applied Physics Aluminium NitrideOptical MaterialsEngineeringAtomic Emission SpectroscopyMicroscopy	2016	57
A simplified GaN/AlGaN quantum cascade detector with an alloy extractor S. Sakr, E. Giraud, Maria Tchernycheva, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringAlgan Thick LayerEngineering	2012	33
<i>n+</i>-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts Lorenzo Lugani, Marco Malinverni, Stefano Tirelli, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2014	29
Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography Enrico Di Russo, F. Moyon, N. Gogneau, The Journal of Physical Chemistry C Aluminium NitrideEngineeringAtom Probe TomographyElectron MicroscopyComposition Metrology	2018	28
Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers Lorenzo Rigutti, Lorenzo Mancini, Williams Lefebvre, Semiconductor Science and Technology Materials ScienceWide-bandgap SemiconductorEngineeringPhysicsStatistical Nanoscale Study	2016	26
Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN Pierre Corfdir, A. Dussaigne, H. Teisseyre, Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringBarrier Al ContentEngineeringAl Content	2012	12

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