N. Gogneau

Epitaxy of GaN Nanowires on Graphene

Vishnuvarthan Kumaresan, Ludovic Largeau, Ali Madouri et al. · Nano Letters · 2016 · 134 citations

Materials Science, Semiconductors, Epitaxial Growth +12

Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN

N. Gogneau, D. Jalabert, E. Monroy et al. · Journal of Applied Physics · 2003 · 107 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +17

Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy

E. Monroy, B. Daudin, E. Bellet‐Amalric et al. · Journal of Applied Physics · 2003 · 86 citations

Materials Science, Chemical Engineering, Metal Droplets +15

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

E. Monroy, Eirini Sarigiannidou, Frédéric Fossard et al. · Applied Physics Letters · 2004 · 73 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +14

N-Polar GaN Nanowires Seeded by Al Droplets on Si(111)

Ludovic Largeau, E. Galopin, N. Gogneau et al. · Crystal Growth & Design · 2012 · 63 citations

Materials Science, Semiconductor Technology, Al Droplets +11