M. Ludwig - Concepedia

Author

M. Ludwig

Fraunhofer Institute for Applied Solid State Physics

Also Known As

M. Ludwig, M.L. Ludwig, Manfred Ludwig, Max Ludwig

Publications

412

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Applied Solid State Physics Fraunhofer-Gesellschaft Rockwell Automation (United States)

About

M. Ludwig is an author at Fraunhofer Institute for Applied Solid State Physics specializing in engineering, photonics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	172
2	Electrical Engineering	8	8	147
3	Applied Physics	3	3	42
4	Computer Engineering	2	2	41
5	Computer Science	1	1	15

M. Ludwig

Publications

294

Citations

H-Index

Page 1

	Year	Citations
8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTs V. Hurm, J. Rosenzweig, M. Ludwig, Electronics Letters EngineeringMsm PhotodiodeGhz BandwidthTransinipedance AmplifierOptoelectronic Devices	1991	32
40 Gbit/s 1.55 µm <i>pin</i> -HEMT photoreceivermonolithically integrated on 3 in GaAs substrate V. Hurm, W. Benz, W. Bronner, Electronics Letters	1998	28
Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation R. Driad, R. E. Makon, M. Ludwig, IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringGain CellsEngineeringRf SemiconductorElectronic Engineering	2005	26
Monolithic, high transimpedance gain (3.3 kΩ),40 Gbit/s InP-HBT-photoreceiver with differential outputs Alexander Huber, D. Huber, T. Morf, Electronics Letters	1999	22
14 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver V. Hurm, M. Ludwig, J. Rosenzweig, Electronics Letters PhotonicsElectrical EngineeringOptical MaterialsEngineeringRf Semiconductor	1993	22
Complete monolithic integrated 2.5 Gbit/s optoelectronicreceiverwithlarge area MSM photodiode for 850 nm wavelength M. Lang, W. Bronner, W. Benz, Electronics Letters	2001	18
Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- mu m gate length quantum-well HEMT's Z.-G. Wang, Manfred Berroth, U. Nowotny, IEEE Journal of Solid-State Circuits Input SignalPhotonicsElectrical Engineering20-Gb/s Optical SystemsEngineering	1993	17
10 Gbit/s long wavelength <i>pin</i> -HEMT photoreceivergrown on GaAs V. Hurm, W. Benz, W. Bronner, Electronics Letters	1997	16
A CMOS RISC CPU with on-chip parallel cache Ehsan Rashid, E. DeLano, Michael Buckley, Cmos CpuSystem On ChipElectrical EngineeringManycore ProcessorEngineering	2002	15
7.4 Gbit/s monolithically integrated GaAs/AlGaAs laser diode-laser driver structure J. Hornung, Z.G. Wang, W. Bronner, Electronics Letters PhotonicsEngineeringSemiconductor LasersApplied PhysicsDiode-laser Driver Structure	1993	14

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