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8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTs

32

Citations

2

References

1991

Year

Abstract

An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transinipedance amplifier, and a 50Ω output buffer has been fabricated using an enhancement/depletion 0.5/an recessed-gate AIGaAs/GaAs HEMT process. Successful operation at data rates up to lOGbit/s has been demonstrated.

References

YearCitations

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