40 Gbit/s 1.55 µm <i>pin</i> -HEMT photoreceivermonolithically integrated on 3 in GaAs substrate

Abstract

A 36.5 GHz bandwidth, 1.55 µm wavelength pin-HEMT photoreceiver with a distributed amplifier has been monolithically integrated on a 3 in GaAs substrate using a 0.15 µm gate-length pseudomorphic HEMT process. The pin photodiode has a responsivity of 0.34 A/W. Clearly-opened eye diagrams for a 40 Gbit/s optical data stream have been demonstrated.