A. Kamath

Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers

A. Kamath, Tarkeshwar C. Patil, R. Adari et al. · IEEE Electron Device Letters · 2012 · 83 citations

Electrical Engineering, Engineering, Rf Semiconductor +12

Highly compact 1T-1R architecture (4F<sup>2</sup> footprint) involving fully CMOS compatible vertical GAA nano-pillar transistors and oxide-based RRAM cells exhibiting excellent NVM properties and ultra-low power operation

X. P. Wang, Zheng Fang, X. Li et al. · 2012 · 59 citations

Non-volatile Memory, Engineering, Nanodevices +19

Fully CMOS-Compatible 1T1R Integration of Vertical Nanopillar GAA Transistor and Oxide-Based RRAM Cell for High-Density Nonvolatile Memory Application

Zheng Fang, X. P. Wang, X. Li et al. · IEEE Transactions on Electron Devices · 2013 · 30 citations

Non-volatile Memory, Engineering, Nanodevices +17

Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO₂-SiO₂) prepared by in situ RTCVD process for system-on-chip applications

S.J. Lee, Chang‐Hwan Choi, A. Kamath et al. · IEEE Electron Device Letters · 2003 · 29 citations

Electrical Engineering, System-on-chip Applications, Engineering +13

Impact of Ni Concentration on the Performance of Ni Silicide/HfO2/TiN Resistive RAM (RRAM) Cells

Zhixian Chen, Zheng Fang, Yan Wang et al. · Journal of Electronic Materials · 2014 · 10 citations

Materials Science, Materials Engineering, Electrical Engineering +9