Tsukuru Katsuyama

Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates

Masaya Okada, Y. Saitoh, Mitsunori Yokoyama et al. · Applied Physics Express · 2010 · 61 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Substrates +10

Effects of strained-layer structures on the threshold current density of AlGaInP/GaInP visible lasers

Jun-ichi Hashimoto, Tsukuru Katsuyama, J. Shinkai et al. · Applied Physics Letters · 1991 · 57 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Lasers +16

Metalorganic Vapor Phase Epitaxial Growth of GaNAs Using Tertiarybutylarsine (TBA) and Dimethylhydrazine (DMHy)

Akihiro Moto, So Tanaka, Nobuyuki Ikoma et al. · Japanese Journal of Applied Physics · 1999 · 44 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Long-Wavelength GaInNAs Vertical-Cavity Surface-Emitting Laser With Buried Tunnel Junction

Yutaka Onishi, Nobuhiro Saga, Kenji Koyamã et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2009 · 23 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +9

1.3 µm Traveling-Wave GaInNAs Semiconductor Optical Amplifier

Jun-ichi Hashimoto, Kenji Koyamã, Tsukuru Katsuyama et al. · Japanese Journal of Applied Physics · 2004 · 14 citations

Optical Materials, Engineering, Laser Applications +18