Akihiro Moto

Near-field photoluminescence study of GaNAs alloy epilayer at room and cryogenic temperature

Kazunari Matsuda, Toshiharu Saiki, Michiko Takahashi et al. · Applied Physics Letters · 2001 · 49 citations

Engineering, Ganas Alloy Epilayer, Luminescence Property +17

Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3–1.55μm

H. B. Yuen, Seth R. Bank, Mark A. Wistey et al. · Journal of Applied Physics · 2004 · 44 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +21

Metalorganic Vapor Phase Epitaxial Growth of GaNAs Using Tertiarybutylarsine (TBA) and Dimethylhydrazine (DMHy)

Akihiro Moto, So Tanaka, Nobuyuki Ikoma et al. · Japanese Journal of Applied Physics · 1999 · 44 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy

Mitsuo Takahashi, Akihiro Moto, So Tanaka et al. · Journal of Crystal Growth · 2000 · 32 citations

Materials Science, Materials Engineering, Engineering +10

Spatial distribution of deep level traps in GaNAs crystals

So Tanaka, Akihiro Moto, Michiko Takahashi et al. · Journal of Crystal Growth · 2000 · 28 citations

Engineering, Physics, Applied Physics +4