J.J. Brown - Concepedia

Concepedia

Author

J.J. Brown

HRL Laboratories (United States)

Also Known As

A. Madhukar, J. Brown, J. J. Brown, J.J. Brown, Jukie J. Brown

52

Publications

1.1K

Citations

18

H-Index

65

Concepts

All Affiliations

HRL Laboratories (United States)University of Southern California Universal Display Corporation University of California, Santa Barbara Princeton University

JB

About

J.J. Brown is an author at HRL Laboratories (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	26	956
2	Applied Physics	12	14	613
3	Medicine	1	1	42
4	Biomedical Engineering	1	1	42
5	Biomolecular Engineering	1	1	11

J.J. Brown

×

28

Publications

1.1K

Citations

18

H-Index

	Year	Citations
High-efficiency top-emitting organic light-emitting devices Min Lu, Michael S. Weaver, T. X. Zhou, Applied Physics Letters Optical MaterialsEngineeringOrganic ElectronicsOptoelectronic DevicesElectronic Devices	2002	178
112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers B. Agarwal, A. Schmitz, J.J. Brown, IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringDb GainEngineeringRf SemiconductorHigh-frequency Device	1998	106
GaAs-compatible surface-micromachined RF MEMS switches Daniel Hyman, A. Schmitz, Brett Warneke, Electronics Letters	1999	83
On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness Gaudenzio Meneghesso, A. Neviani, R. Oesterholt, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringThreshold EnergyElectronic Engineering	1999	81
Improved initial drop in operational lifetime of blue phosphorescent organic light emitting device fabricated under ultra high vacuum condition H. Yamamoto, Jason Brooks, Michael S. Weaver, Applied Physics Letters Optical MaterialsEngineeringLuminance LossOptoelectronic DevicesHv Device Eml	2011	66
Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar L. Zhang, J. Ramer, J.J. Brown, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringGallium NitrideEngineeringApplied Physics	1996	57
Plasma-etching processes for ULSI semiconductor circuits M. Armacost, P.D. Hoh, Rich Wise, IBM Journal of Research and Development EngineeringElectron-beam LithographyOptoelectronic DevicesIntegrated CircuitsSelectivity Requirements	1999	57
Power Consumption and Temperature Increase in Large Area Active-Matrix OLED Displays Min‐Hao Lu, M. Hack, Richard Hewitt, Journal of Display Technology White OledElectrical EngineeringDisplay Temperature RiseEngineeringSolid-state Lighting	2008	50
The effect of cross-linking on the in vivo disintegration of hard gelatin capsules. J.J. Brown, N. Madit, Ewart T. Cole, Pharmaceutical Research Tissue EngineeringHard Gelatin CapsulesBiopolymer GelEngineeringCross-link	1998	42
High-breakdown-voltage AlInAs/GaInAs junction-modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD J.B. Shealy, M. Hashemi, Steven P. DenBaars, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringElectronic Engineering	1993	32

Page 1