IEEE Transactions on Microwave Theory and Techniques · 1998 · 106 citations · 13 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsWide Band Gap SemiconductorsCoplanar WaveguidesCutoff FrequencyGainHigh-frequency Amplifier DesignMicrowave Amplifier DesignMillimeter-wave Integrated CircuitsTraveling-wave Tube AmplifiersWideband Amplifiers
We report traveling-wave amplifiers having 1-112 GHz bandwidth with 7 dB gain, and 1-157 GHz bandwidth with 5 dB gain. A third amplifier exhibited 5 dB gain and a 180 GHz high-frequency cutoff. The amplifiers were fabricated in a 0.1-/spl mu/m gate length InGaAs/InAlAs HEMT MIMIC technology. The use of gate-line capacitive-division, cascode gain cells and low-loss elevated coplanar waveguide lines have yielded record bandwidth broad-band amplifiers.
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