J.F. Gibbons - Concepedia

Author

J.F. Gibbons

Stanford University

Also Known As

J. F. Gibbons J. F. Gibbons, J. Gibbons, J.F. Gibbons, James F. Gibbons James F. Gibbons

Publications

281

Citations

H-Index

Concepts

All Affiliations

Stanford University

About

J.F. Gibbons is an author at Stanford University specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	262
2	Electrical Engineering	7	7	262
3	Applied Physics	5	5	110
4	Materials Science	2	2	42
5	Materials Engineering	1	1	14

J.F. Gibbons

Publications

262

Citations

H-Index

Page 1

	Year	Citations
One-gate-wide CMOS Inverter on laser-recrystallized polysilicon J.F. Gibbons, K.F. Lee IEEE Electron Device Letters Electrical EngineeringP Channel DeviceEngineeringCmos InverterPower Semiconductor Device	1980	124
A lateral silicon-on-insulator bipolar transistor with a self-aligned base contact James C. Sturm, J.P. McVittie, J.F. Gibbons, IEEE Electron Device Letters Entire Base RegionElectrical EngineeringEngineeringBase ResistanceNanoelectronics	1987	38
Growth and Processing of Relaxed-Si<sub>1-x</sub>Ge<sub>x</sub>/Strained-Si Structures for Metal-Oxide Semiconductor Applications J.J. Welser, Judy L. Hoyt, J.F. Gibbons Japanese Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringEngineeringDislocation Interaction	1994	32
Physical Principles of Avalanche Transistor Pulse Circuits Douglas Hamilton, J.F. Gibbons, W. Shockley Proceedings of the IRE Physical PrinciplesDevice ModelingElectrical EngineeringSemiconductor DeviceEngineering	1959	28
Papers on carrier drift velocities in silicon at high electric field strengths J.F. Gibbons IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringEngineeringCarrier Drift VelocitiesPhysics	1967	16
Temperature and scaling behavior of strained-Si N-MOSFET's J.J. Welser, Judy L. Hoyt, J.F. Gibbons IEEE Transactions on Electron Devices Device ModelingMaterials EngineeringElectrical EngineeringEngineeringNanoelectronics	1993	14
Polycrystalline Carbon: A Novel Material for Gate Electrodes in MOS Technology G. Raghavan, J. L. Hoyt J. L. Hoyt, J.F. Gibbons Japanese Journal of Applied Physics Materials ScienceElectrical EngineeringEngineeringVlsi DesignGate Electrodes	1993	10

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