Pulse–time-modulated electron cyclotron resonance plasma discharge for highly selective, highly anisotropic, and charge-free etching

Seiji Samukawa, Hiroto Ohtake, Tetsu Mieno

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

EngineeringGlow DischargePlasma PhysicsElectron Cyclotron ResonancePlasma Electronics +14

Two-Dimensional Self-Consistent Simulation of a DC Magnetron Discharge

Eiji Shidoji, Hiroto Ohtake, Nobuhiko Nakano, +1

Japanese Journal of Applied Physics

Electrical EngineeringEngineeringPhysicsDc DischargeGlow Discharge +10

Prediction of UV spectra and UV-radiation damage in actual plasma etching processes using on-wafer monitoring technique

Butsurin Jinnai, Seiichi Fukuda, Hiroto Ohtake, +1

Journal of Applied Physics

Ultraviolet LightElectrical EngineeringOptical MaterialsEngineeringUv Radiation +13

Charge-free etching process using positive and negative ions in pulse-time modulated electron cyclotron resonance plasma with low-frequency bias

Hiroto Ohtake, Seiji Samukawa

Applied Physics Letters

Electrical EngineeringLow-frequency BiasEngineeringPlasma ElectronicsElectron-beam Lithography +13

Simulation of a Pulse Time-Modulated Bulk Plasma in Cl₂

Ayumi Yokozawa, Hiroto Ohtake, Seiji Samukawa

Japanese Journal of Applied Physics

Electron DensityPlasma ElectronicsEngineeringPhysicsPlasma Simulation +12

Highly selective low-damage processes using advanced neutral beams for porous low-k films

Hiroto Ohtake, Nobuhiko Inoue, Takuya Ozaki, +3

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

EngineeringElectron-beam LithographyVacuum DeviceChemistryPlasma Processing +19

Low-damage low-k etching with an environmentally friendly CF3I plasma

E. Soda, Seiichi Kondo, Shuichi Saito, +4

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Materials ScienceElectrical EngineeringPlasma ElectronicsEngineeringMicrofabrication +11

Structure-designable method to form super low-<i>k</i>SiOC film (<i>k</i>= 2.2) by neutral-beam-enhanced chemical vapour deposition

Shigeo Yasuhara, Juhyun Chung, Kunitoshi Tajima, +7

Journal of Physics D Applied Physics

Materials ScienceChemical EngineeringDielectric ConstantEngineeringSurface Science +13

Enhancement of Reactivity in Au Etching by Pulse-Time-Modulated Cl₂ Plasma

Hiroto Ohtake, Seiji Samukawa, Hirokazu Oikawa, +1

Japanese Journal of Applied Physics

EngineeringMetal EtchingPlasma ProcessingEvaporation RateIon Implantation +14

Mechanical Property Control of Low-k Dielectrics for Diminishing Chemical Mechanical Polishing (CMP)-Related Defects in Cu-Damascene Interconnects

K. Hijioka, Fuminori Ito, M. Tagami, +5

Japanese Journal of Applied Physics

EngineeringMechanical EngineeringInterconnect (Integrated Circuits)Mechanical Property ControlLow-k Dielectrics +15