K. Tachi

Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion

Kuniyuki Kakushima, Koji Okamoto, Masataka Adachi et al. · Solid-State Electronics · 2008 · 57 citations

Engineering, Electrical Engineering, Materials Engineering +14

Spectroscopic charge pumping in Si nanowire transistors with a high-κ/metal gate

M. Cassé, K. Tachi, Sebastian Thiele et al. · Applied Physics Letters · 2010 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

Interface and electrical properties of La-silicate for direct contact of high-k with silicon

Kuniyuki Kakushima, K. Tachi, Masataka Adachi et al. · Solid-State Electronics · 2010 · 50 citations

Engineering, Materials Engineering, Materials Science +14

Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

Kuniyuki Kakushima, Koji Okamoto, K. Tachi et al. · Journal of Applied Physics · 2008 · 42 citations

Engineering, Materials Engineering, Materials Science +17

A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates (Φ-Flash), suitable for full 3D integration.

A. Hubert, Emmanuel Nowak, K. Tachi et al. · HAL (Le Centre pour la Communication Scientifique Directe) · 2009 · 40 citations

Engineering, Computer Engineering, Electrical Engineering +17