R. Kraft

Diamond Wire-Sawn Silicon Wafers – from the Lab to the Cell Production

Adrien Bidiville, Kilian Wasmer, R. Kraft et al. · EU PVSEC · 2009 · 82 citations · Full text

CMOS metal replacement gate transistors using tantalum pentoxide gate insulator

Amitava Chatterjee, R. A. Chapman, K. Joyner et al. · 2002 · 71 citations

Electrical Engineering, Engineering, Nanoelectronics +8

Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate process

Amitava Chatterjee, R. A. Chapman, G. Dixit et al. · 2002 · 56 citations

Poly Gate, Electrical Engineering, Engineering +13

Surface nitridation of silicon dioxide with a high density nitrogen plasma

R. Kraft, Thomas Schneider, W.W. Dostalik et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1997 · 45 citations

Langmuir Probe, Electrical Engineering, Plasma Electronics +15

Feasibility of using W/TiN as metal gate for conventional 0.13 μm CMOS technology and beyond

Jerry C. Hu, Hsiwen Yang, R. Kraft et al. · 2002 · 36 citations

Engineering, Gate Sheet Resistance, Thin Gate Dielectrics +16