Rimoon Agaiby

Influence of Frequency Dependent Time to Breakdown on High-K/Metal Gate Reliability

Steve Knebel, S. Kupke, Uwe Schroeder et al. · IEEE Transactions on Electron Devices · 2013 · 27 citations

Reliability, Silc Behavior, Electrical Engineering +15

Quantifying self-heating effects with scaling in globally strained Si MOSFETs

Rimoon Agaiby, Yang Yang, Sarah H. Olsen et al. · Solid-State Electronics · 2007 · 18 citations

Device Modeling, Electrical Engineering, Engineering +9

The Degradation Process of High-<inline-formula> <tex-math notation="TeX">$k~{\rm SiO}_{2}/{\rm HfO}_{2}$ </tex-math></inline-formula> Gate-Stacks: A Combined Experimental and First Principles Investigation

Ebrahim Nadimi, Guntrade Roll, S. Kupke et al. · IEEE Transactions on Electron Devices · 2014 · 16 citations

Semiconductors, Device Modeling, Electrical Engineering +14

Detailed Correlation of Electrical and Breakdown Characteristics to the Structural Properties of ALD Grown HfO₂- and ZrO₂-based Capacitor Dielectrics

Uwe Schroeder, Wenke Weinreich, Elke Erben et al. · ECS Transactions · 2009 · 12 citations

Aluminium Nitride, Dielectrics, Engineering +18

Reliability Comparison of ZrO₂-Based DRAM High-k Dielectrics Under DC and AC Stress

Steve Knebel, Dayu Zhou, Uwe Schroeder et al. · IEEE Transactions on Device and Materials Reliability · 2017 · 12 citations

Engineering, Voltage Acceleration, Reliability Engineering +18