Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

Ekaterina Yurchuk, Johannes Müller, Steve Knebel, +5

Thin Solid Films

Materials ScienceLayer ThicknessFerroelasticsFerroelectric BehaviourEngineering +5

Effect of acceptor doping on phase transitions of HfO2 thin films for energy-related applications

Min Hyuk Park, Tony Schenk, Michael Hoffmann, +4

Nano Energy

Materials SciencePhase TransitionsEngineeringOxide ElectronicsApplied Physics +6

How to make DRAM non-volatile? Anti-ferroelectrics: A new paradigm for universal memories

Milan Pešić, Steve Knebel, Michael Hoffmann, +3

Non-volatile MemoryEngineeringEmerging Memory TechnologyDram Memory CellsFerroelectric Random-access Memory +21

Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

Dayu Zhou, Johannes Müller, Jin Xu, +3

Applied Physics Letters

EngineeringFerroelectric Thin FilmsElectrical CharacteristicsFerroelectric ApplicationNanoelectronics +14

Conduction barrier offset engineering for DRAM capacitor scaling

Milan Pešić, Steve Knebel, Kyuho Cho, +7

Solid-State Electronics

Electrical EngineeringEngineeringDram Capacitor ScalingNanoelectronicsSemiconductor Memory +3

Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

Milan Pešić, Steve Knebel, Maximilian Geyer, +10

Journal of Applied Physics

Materials EngineeringMaterials ScienceElectrical EngineeringNon-volatile MemoryEngineering +12

Conduction Mechanisms and Breakdown Characteristics of $\hbox{Al}_{2}\hbox{O}_{3}$-Doped $\hbox{ZrO}_{2}$ High-$k$ Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors

Steve Knebel, Uwe Schroeder, Dayu Zhou, +2

IEEE Transactions on Device and Materials Reliability

DielectricsEngineeringHigh Voltage EngineeringAtomic Layer DepositionPower Electronic Devices +14

Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors

Dayu Zhou, Uwe Schroeder, Jin Xu, +7

Journal of Applied Physics

Materials ScienceMaterials EngineeringElectrical EngineeringNanomixed Amorphous ZralxoyEngineering +12

Influence of Frequency Dependent Time to Breakdown on High-K/Metal Gate Reliability

Steve Knebel, S. Kupke, Uwe Schroeder, +4

IEEE Transactions on Electron Devices

ReliabilitySilc BehaviorElectrical EngineeringReliability EngineeringEngineering +13

Reliability of $\hbox{SrRuO}_{3}\hbox{/SrTiO}_{3}\hbox{/SrRuO}_{3}$ Stacks for DRAM Applications

S. Kupke, Steve Knebel, Uwe Schroeder, +3

IEEE Electron Device Letters

ReliabilityMaterials ScienceElectrical EngineeringMemory ArchitectureEngineering +13