Shiwei Feng

A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient

Xiang Zheng, Shiwei Feng, Yamin Zhang et al. · IEEE Transactions on Electron Devices · 2017 · 50 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +12

Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal

Bangbing Shi, Shiwei Feng, Lei Shi et al. · IEEE Transactions on Power Electronics · 2017 · 45 citations

Device Modeling, Electrical Engineering, Power Mosfet +15

Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy

Xiang Zheng, Shiwei Feng, Yamin Zhang et al. · Microelectronics Reliability · 2016 · 38 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemts +7

Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base–Collector Voltage Drop at Low Current

Bangbing Shi, Shiwei Feng, Yamin Zhang et al. · IEEE Transactions on Power Electronics · 2019 · 26 citations

Electrical Engineering, Semiconductor Device, Sic Bjts +10

Memristive True Random Number Generator with Intrinsic Two-Dimensional Physical Unclonable Function

Bo Liu, Jing Ma, Han Hsiang Tai et al. · ACS Applied Electronic Materials · 2023 · 21 citations

Engineering, Phase Change Memory, Recurrent Neural Network +17