Bangbing Shi - Concepedia

Author

Bangbing Shi

Beijing University of Technology ORCID

Also Known As

B Shi, B. Shi, Bang-Bing Shi, Bangbing Shi, Shi Bang-Bing

Publications

159

Citations

H-Index

Concepts

All Affiliations

Beijing University of Technology University of Electronic Science and Technology of China Shanghai Polytechnic University

About

Bangbing Shi is an author at Beijing University of Technology specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	151
2	Electrical Engineering	7	7	151
3	Applied Physics	4	4	70
4	Computer Engineering	1	1	13
5	Materials Science	1	1	15

Bangbing Shi

Publications

151

Citations

H-Index

Page 1

	Year	Citations
Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal Bangbing Shi, Shiwei Feng, Lei Shi, IEEE Transactions on Power Electronics Device ModelingElectrical EngineeringPower MosfetEngineeringPower Device	2017	45
Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base–Collector Voltage Drop at Low Current Bangbing Shi, Shiwei Feng, Yamin Zhang, IEEE Transactions on Power Electronics Electrical EngineeringSemiconductor DeviceSic BjtsEngineeringPower Device	2019	26
Investigation on Short-Circuit Characterization and Optimization of 3.3-kV SiC MOSFETs Ximing Chen, Hong Chen, Bangbing Shi, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHigh Voltage Engineering	2020	23
Improving thermal conductivity of radiators using a graphene-doped coating Zhongdong Yin, Haoyang Yin, Bangbing Shi, Surface Engineering Materials ScienceGraphene NanomeshesElectrical EngineeringHeat Dissipation EfficiencyEngineering	2020	15
Deep Understanding of Negative Gate Voltage Restriction for SiC mosfet Under Wide Temperature Range Ximing Chen, Xuan Li, Bangbing Shi, IEEE Transactions on Power Electronics EngineeringWide Temperature RangeSemiconductor DeviceReliability EngineeringPower Semiconductors	2021	15
Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors Lei Shi, Shiwei Feng, Yamin Zhang, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2015	14
Temperature distribution measurement based on field-programmable gate array embedded ring oscillators Wenjuan Yu, Shiwei Feng, Yamin Zhang, Solid-State Electronics Electrical EngineeringField-programmable Gate ArrayEngineeringCircuit SystemTemperature Distribution Measurement	2019	13

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