Publication | Closed Access
Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy
38
Citations
30
References
2016
Year
Wide-bandgap SemiconductorElectrical EngineeringGan HemtsEngineeringPhysicsApplied PhysicsAluminum Gallium NitrideSpatial PositionGan Power DeviceCurrent Transient Spectroscopy
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