Ho-Myoung An

Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices

Hee‐Dong Kim, Ho-Myoung An, Eui Bok Lee et al. · IEEE Transactions on Electron Devices · 2011 · 107 citations

Engineering, Electrical Engineering, Materials Science +17

Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

Hee‐Dong Kim, Ho-Myoung An, Yujeong Seo et al. · IEEE Electron Device Letters · 2011 · 69 citations

Engineering, Electrical Engineering, Materials Science +17

Large resistive-switching phenomena observed in Ag/Si₃N₄/Al memory cells

Hee-Dong Kim, Ho-Myoung An, Kyoung Chan Kim et al. · Semiconductor Science and Technology · 2010 · 66 citations

Engineering, Materials Engineering, Materials Science +15

Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

Seok Man Hong, Hee‐Dong Kim, Ho-Myoung An et al. · IEEE Electron Device Letters · 2013 · 62 citations

Natural Sciences, Materials Engineering, Materials Science +17

Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application

Tukaram D. Dongale, Girish U. Kamble, Dae Yun Kang et al. · physica status solidi (RRL) - Rapid Research Letters · 2021 · 59 citations

Engineering, Electrical Engineering, Materials Science +17