Seok Man Hong

Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

Seok Man Hong, Hee‐Dong Kim, Ho-Myoung An et al. · IEEE Electron Device Letters · 2013 · 59 citations

Engineering, Thin Film Process Technology, Stable Rs +17

Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

Hee-Dong Kim, Ho-Myoung An, Seok Man Hong et al. · Semiconductor Science and Technology · 2012 · 41 citations

Non-volatile Memory, Optical Materials, Engineering +18

Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays

Hee-Dong Kim, Min Ju Yun, Seok Man Hong et al. · Nanotechnology · 2014 · 36 citations

Materials Science, Electrical Engineering, Nanopyramid Bottom Electrodes +10

Forming-free SiN-based resistive switching memory prepared by RF sputtering

Hee-Dong Kim, Ho-Myoung An, Seok Man Hong et al. · physica status solidi (a) · 2013 · 34 citations

Non-volatile Memory, Electrical Engineering, Electronic Devices +15

Resistive switching characteristics of sol–gel based ZnO nanorods fabricated on flexible substrates

Soyun Park, Jae Hyuk Lee, Hee‐Dong Kim et al. · physica status solidi (RRL) - Rapid Research Letters · 2013 · 26 citations

Materials Science, Electrical Engineering, Electronic Devices +15