Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

Seok Man Hong, Hee‐Dong Kim, Ho-Myoung An, +1

IEEE Electron Device Letters

EngineeringThin Film Process TechnologyStable RsCharge TransportElectronic Devices +15

Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

Hee-Dong Kim, Ho-Myoung An, Seok Man Hong, +1

Semiconductor Science and Technology

Non-volatile MemoryOptical MaterialsEngineeringEmerging Memory TechnologyOptoelectronic Devices +16

Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays

Hee-Dong Kim, Min Ju Yun, Seok Man Hong, +1

Nanotechnology

Materials ScienceElectrical EngineeringNanopyramid Bottom ElectrodesEngineeringNanotechnology +8

Forming-free SiN-based resistive switching memory prepared by RF sputtering

Hee-Dong Kim, Ho-Myoung An, Seok Man Hong, +1

physica status solidi (a)

Non-volatile MemoryElectrical EngineeringElectronic DevicesRf Sputtering MethodEngineering +13

Resistive switching characteristics of sol–gel based ZnO nanorods fabricated on flexible substrates

Soyun Park, Jae Hyuk Lee, Hee‐Dong Kim, +3

physica status solidi (RRL) - Rapid Research Letters

Materials ScienceElectrical EngineeringElectronic DevicesZno NanorodsElectronic Materials +13

Improved resistive switching properties by nitrogen doping in tungsten oxide thin films

Seok Man Hong, Hee-Dong Kim, Min Ju Yun, +3

Thin Solid Films

Materials ScienceMaterials EngineeringEngineeringOxide ElectronicsApplied Physics +6

Improved resistive switching phenomena observed in SiN_<i>x</i>‐based resistive switching memory through oxygen doping process

Ju Hyun Park, Hee‐Dong Kim, Seok Man Hong, +3

physica status solidi (RRL) - Rapid Research Letters

SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesSin X +13

PE-ALD of Ge_1−xS_xamorphous chalcogenide alloys for OTS applications

Myoungsub Kim, Youngjun Kim, Minkyu Lee, +2

Journal of Materials Chemistry C

Materials EngineeringMaterials ScienceOts ApplicationsNon-volatile MemoryEngineering +11

Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Seok Man Hong, Hee-Dong Kim, Ho-Myoung An, +1

Materials Research Bulletin

Materials ScienceElectrical EngineeringEngineeringNanoelectronicsOxide Electronics +6

Amorphous Ge-Se-S chalcogenide alloys via post plasma sulfurization of atomic layer deposition GeSe for ovonic threshold switch applications

Sukhwan Jun, Seunggi Seo, Seungwon Park, +8

Journal of Alloys and Compounds