Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

Abstract

This letter covers the fabrication of a transparent resistive random access memory (T-ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching characteristics. This AIN-based T-ReRAM shows a transmittance above 80% (including the substrate) in the visible region and an excellent switching behavior under ±3 V/10 ns with a high-to-low resistance ratio greater than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . In the reliability test, the device showed an endurance of >; 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> cycles and a retention time of >; 105 s at 85°C. We believe that the AIN-based T-ReRAM presented in this letter could be a milestone for future see-through electronic devices.