Sadayoshi Horii - Concepedia

Author

Sadayoshi Horii

Hitachi (Japan)

Also Known As

Horii, S., S Horii, S. Horii, Sadayoshi Horii, Sadayoshi Horii Sadayoshi Horii

Publications

318

Citations

H-Index

Concepts

All Affiliations

Hitachi (Japan)Panasonic (Japan)Japan Advanced Institute of Science and Technology Nara Institute of Science and Technology Panasonic (Poland)

About

Sadayoshi Horii is an author at Hitachi (Japan) specializing in materials science, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	233
2	Applied Physics	8	8	212
3	Chemistry	4	4	115
4	Electrical Engineering	4	4	84
5	Chemical Engineering	1	1	14

Sadayoshi Horii

Publications

233

Citations

H-Index

Page 1

	Year	Citations
Electrical and physical properties of HfO2 films prepared by remote plasma oxidation of Hf metal Kazuhiko Yamamoto, Shigenori Hayashi, M. Niwa, Applied Physics Letters EngineeringOxidation ResistanceRemote Plasma OxidationChemistryPlasma Processing	2003	67
Material Properties of Heteroepitaxial Ir and Pb(Zr<sub>x</sub>Ti<sub>1-x</sub>)O<sub>3</sub> Films on (100)(ZrO<sub>2</sub>)<sub>1-x</sub>(Y<sub>2</sub>O<sub>3</sub>)<sub>x</sub>/(100)Si Structure Prepared by Sputtering Susumu Horita, Sadayoshi Horii, Shinya Umemoto Japanese Journal of Applied Physics Optical MaterialsEngineeringPzt FilmOptoelectronic DevicesThin Film Process Technology	1998	29
Enhancing memory efficiency of Si nanocrystal floating gate memories with high-κ gate oxides Prakaipetch Punchaipetch, Yukiharu Uraoka, Takashi Fuyuki, Applied Physics Letters Non-volatile MemoryEngineeringEmerging Memory TechnologyHfo2 Gate OxideIntegrated Circuits	2006	28
Thickness Dependence of Material Properties of Epitaxial Pb(Zr<sub>x</sub>Ti<sub>1-x</sub>)O<sub>3</sub> Films on Ir/(100) (ZrO<sub>2</sub>)<sub>1-x</sub>(Y<sub>2</sub>O<sub>3</sub>)<sub>x</sub>/(100)Si Structures Sadayoshi Horii, Seiji Yokoyama, Hideki Nakajima, Japanese Journal of Applied Physics Materials ScienceEpitaxial PbThickness DependenceMaterial PropertiesEngineering	1999	26
High deposition rate of epitaxial (100) Iridium film on (100)YSZ/(100)Si substrate by RF sputtering deposition Tran Dang Khoa, Sadayoshi Horii, Susumu Horita Thin Solid Films Materials ScienceMaterials EngineeringSi SubstrateEpitaxial GrowthEngineering	2002	22
Metalorganic Chemical Vapor Deposition of HfO<sub>2</sub>Films through the Alternating Supply of Tetrakis(1-methoxy-2-methyl-2-propoxy)-Hafnium and Remote-Plasma Oxygen Sadayoshi Horii, Kazuhiko Yamamoto, M. Asai, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringAlternating SupplyHafnium OxideEngineering	2003	21
Effect of Nitrogen on Electrical and Physical Properties of Polyatomic Layer Chemical Vapor Deposition HfSi<sub><i>x</i></sub>O<sub><i>y</i></sub>Gate Dielectrics Prakaipetch Punchaipetch, Takeshi Okamoto, Hideki Nakamura, Japanese Journal of Applied Physics EngineeringHafnium SilicateVacuum DeviceChemistryChemical Deposition	2004	14
Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing Prakaipetch Punchaipetch, Makoto Miyashita, Yukiharu Uraoka, Japanese Journal of Applied Physics Materials ScienceSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2006	13
Impact of Hf Metal Predeposition on the Properties of HfO<sub>2</sub>Grown by Physical and Chemical Vapor Deposition Kazuhiko Yamamoto, Shigenori Hayashi, M. Niwa, Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceHafnium OxideEngineeringNanoelectronics	2003	13

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