Material Properties of Heteroepitaxial Ir and Pb(Zr_xTi_1-x)O₃ Films on (100)(ZrO₂)_1-x(Y₂O₃)_x/(100)Si Structure Prepared by Sputtering

Abstract

We investigated the crystalline quality and electrical properties of heteroepitaxial Ir and Pb(Zr x Ti 1- x )O 3 films deposited by sputtering on an epitaxial (100)(ZrO 2 ) 1- x (Y 2 O 3 ) x film/(100)Si substrate structure. The Ir(100) and Ir(111) orientations were enhanced and reduced, respectively, by decreasing the deposition rate. The φ scan pattern of X-ray diffraction showed that the (100) oriented film was the heteroepitaxial film on the epitaxial (100)YSZ film with a cube on cube relationship. On this epitaxial (100)Ir film, a heteroepitaxial (001)PZT film was obtained by reactive sputtering. The P–E hysteresis loop of the 200-nm-thick epitaxial PZT film showed a well-saturated square shape at the ac amplitude of 3 V, and the remanent polarization 2 P r and the coercive field 2 E c were 83 µC/cm 2 and 131 kV/cm, respectively. The leakage current was about 1×10 -7 A/cm 2 at ±5 V.