Wesley Morris

Latchup in CMOS

Wesley Morris · 2003 · 52 citations

Engineering, Computer Engineering, Electrical Engineering +16

The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe technology

Steven H. Voldman, L. Lanzerotti, Wesley Morris et al. · 2004 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

Superior latch-up resistance of high dose, high energy implanted p/sup +/ buried layers

K.C. Leong, P.C. Liu, Wesley Morris et al. · 2003 · 13 citations

Engineering, Electrical Engineering, Electronic Materials +15

Single Event Upset Results from the Radiation Hardened Electronic Memory Experiment on the International Space Station

David Alexander, Alonzo Vera, Wesley Morris et al. · 2018 · 12 citations

Medicine, Electrical Engineering, Fault Tolerance +11

Buried layer/connecting layer high energy implantation for improved CMOS latch-up

Wesley Morris, L. Rubin, D. Wristers · 2002 · 11 citations

Engineering, Electrical Engineering, Low-power Design +12