F. Kong

Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC

Silma Alberton Corrêa, C. Radtke, G. V. Soares et al. · Applied Physics Letters · 2009 · 35 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Extraction of MOSFET threshold voltage, series resistance, effective channel length, and inversion layer mobility from small-signal channel conductance measurement

F. Kong, Y.T. Yeow, Z.Q. Yao · IEEE Transactions on Electron Devices · 2001 · 31 citations · Full text

Engineering, Electrical Engineering, Circuit Theory +16

Simulation of interface states effect on the scanning capacitance microscopy measurement of p–n junctions

Jing Yang, F. Kong · Applied Physics Letters · 2002 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Sequential thermal treatments of SiC in NO and O2: Atomic transport and electrical characteristics

G. V. Soares, I. J. R. Baumvol, Leonie Hold et al. · Applied Physics Letters · 2007 · 16 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17