Sequential thermal treatments of SiC in NO and O2: Atomic transport and electrical characteristics

Abstract

Sequential thermal oxidations and oxynitridations of SiC were performed using O218 and NO. The resulting films were characterized by x-ray photoelectron spectroscopy, ion beam analyses, and capacitance-voltage measurements. The best electrical characteristics were obtained from films directly grown in NO. A subsequent oxidation in O2 degraded the interface due to negative flatband-voltage shift, removal of N, and formation of C compounds, while a further annealing in NO brought the flatband shift in the C-V curves to rather moderate figures. This shift is related to competitive processes taking place during dielectric film formation which are discussed.