Bernd Thomas

Temperature dependence of stacking fault energy in close-packed metals and alloys

L. Rémy, A. Pineau, Bernd Thomas · Materials Science and Engineering · 1978 · 301 citations

Materials Science, Materials Engineering, Engineering +12

Formation of the Z1,2 deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation

Ioana Pintilie, L. Pintilie, K. Irmscher et al. · Applied Physics Letters · 2002 · 87 citations

Materials Science, Semiconductors, Materials Engineering +15

On the variation of the intrinsic stacking fault energy with temperature in Fe-18 Cr-12 Ni alloys

Francis Lecroisey, Bernd Thomas · physica status solidi (a) · 1970 · 44 citations

Materials Science, Materials Engineering, Engineering +7

Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications

St.G. Müller, Edward Sanchez, David M. Hansen et al. · Journal of Crystal Growth · 2011 · 29 citations

Materials Engineering, Semiconductor Technology, High Quality Sic +7

6.5 kV SiC PiN Diodes with Improved Forward Characteristics

Dethard Peters, Wolfgang Bartsch, Bernd Thomas et al. · Materials science forum · 2010 · 27 citations

Electrical Engineering, Engineering, High Voltage Engineering +9