Bernd Thomas - Concepedia

Author

Bernd Thomas

Infineon Technologies (Germany)

Also Known As

B. Thomas, B.G. Thomas, Bernd Thomas, Binoy T Thomas, Thomas, Bernd

Publications

925

Citations

H-Index

Concepts

All Affiliations

Infineon Technologies (Germany)Infineon Technologies (Canada)Fraunhofer Institute for Integrated Systems and Device Technology Stony Brook University Corning (United States)

About

Bernd Thomas is an author at Infineon Technologies (Germany) specializing in engineering, materials engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	23	761
2	Applied Physics	13	19	664
3	Materials Engineering	13	16	645
4	Materials Science	12	15	602
5	Electrical Engineering	11	13	206

Bernd Thomas

Publications

772

Citations

H-Index

Page 1

	Year	Citations
Temperature dependence of stacking fault energy in close-packed metals and alloys L. Rémy, A. Pineau, Bernd Thomas Materials Science and Engineering Materials ScienceMaterials EngineeringEngineeringApplied PhysicsCondensed Matter Physics	1978	301
Formation of the Z1,2 deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation Ioana Pintilie, L. Pintilie, K. Irmscher, Applied Physics Letters Materials ScienceSemiconductorsMaterials EngineeringZ1,2 Deep-level DefectsDeep-level Transient Spectroscopy	2002	87
On the variation of the intrinsic stacking fault energy with temperature in Fe-18 Cr-12 Ni alloys Francis Lecroisey, Bernd Thomas physica status solidi (a) Materials ScienceMaterials EngineeringEngineeringPhysicsCondensed Matter Physics	1970	44
Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications St.G. Müller, Edward Sanchez, David M. Hansen, Journal of Crystal Growth Materials EngineeringSemiconductor TechnologyHigh Quality SicEngineeringVolume Production	2011	29
6.5 kV SiC PiN Diodes with Improved Forward Characteristics Dethard Peters, Wolfgang Bartsch, Bernd Thomas, Materials science forum Electrical EngineeringEngineeringHigh Voltage EngineeringPower DeviceImproved Forward Characteristics	2010	27
Step-controlled homoepitaxial growth of 4H–SiC on vicinal substrates Birgit Kallinger, Patrick Berwian, Jochen Friedrich, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringApplied PhysicsEpitaxial Growth	2013	25
Improved dynamic properties of GTO-thyristors and diodes by proton implantation D. Silber, W.‐D. Nowak, W. Wondrak, Semiconductor TechnologyElectrical EngineeringEngineeringProton ImplantationMev Proton Irradiation	1985	21
High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor Christian Hecht, René Stein, Bernd Thomas, Materials science forum Materials EngineeringElectrical EngineeringWafer Scale ProcessingEngineeringAdvanced Packaging (Semiconductors)	2010	20
Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications Bernd Thomas, Wolfgang Bartsch, René Stein, Materials science forum Materials EngineeringSemiconductor TechnologyElectrical EngineeringDifferent Cvd SystemsHigh Voltage Applications	2004	18
Doping induced lattice misfit in 4H–SiC homoepitaxy Birgit Kallinger, Patrick Berwian, Jochen Friedrich, Journal of Crystal Growth Semiconductor TechnologyInduced Lattice MisfitEngineeringApplied PhysicsCondensed Matter Physics	2012	18

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