6.5 kV SiC PiN Diodes with Improved Forward Characteristics

Abstract

The paper compares static and dynamic characteristics of 6.5 kV SiC PiN diodes fabricated with different p-emitters. The version with the thickest p-emitter (4 µm) showed the lowest forward voltage (3.4 V at 100 A/cm²) and the lowest (negative) temperature coefficient. Forward voltage DC stress tests revealed a stability within the measurement error of the test apparatus (<50 mV). The dynamic performance showed a soft recovery even at 4 kV. The reverse recovery charge Qrr is analyzed for different forward currents and junction temperatures. The dynamic losses of the SiC PiN diode are marginal with view to the application in industrial inverters.