Edward Sanchez - Concepedia

Author

Edward Sanchez

Also Known As

E Sanchez, E Snchez, E Sánchez, E. K. Sanchez, E. Sanchez, E.K. Sanchez, Edward K Sanchez, Edward K. Sanchez, Edward Sanchez, Eva Duran Sánchez

108

Publications

939

Citations

H-Index

Concepts

All Affiliations

Corning (United States)Stony Brook University Dow Chemical (Japan)Carnegie Mellon University State University of New York

About

Edward Sanchez is an author at Corning (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	32	751
2	Applied Physics	18	31	729
3	Materials Engineering	14	17	387
4	Electrical Engineering	3	3	52
5	Chemistry	1	1	22

Edward Sanchez

Publications

769

Citations

H-Index

Page 1

	Year	Citations
Nucleation of threading dislocations in sublimation grown silicon carbide Edward Sanchez, J. Q. Liu, Marc De Graef, Journal of Applied Physics Materials EngineeringMaterials ScienceDislocation DensitiesEngineeringSevere Plastic Deformation	2002	69
Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC Michael Dudley, Fangzhen Wu, H. Wang, Applied Physics Letters EngineeringFault VectorsMechanical EngineeringDefect ToleranceTransport Phenomena	2011	64
Hexagonal voids and the formation of micropipes during SiC sublimation growth Thomas Kuhr, Edward Sanchez, Marek Skowroński, Journal of Applied Physics EngineeringCrystal Growth TechnologyHexagonal VoidsCeramic Matrix CompositeGrowth Steps	2001	42
Assessment of Polishing-Related Surface Damage in Silicon Carbide Edward Sanchez, S. Ha, J.R. Grim, Journal of The Electrochemical Society EngineeringMechanical EngineeringSurface IntegrityStructural MaterialsSubsurface Damage	2002	34
Prismatic Slip in PVT-Grown 4H-SiC Crystals Jianqiu Guo, Yu Yang, Balaji Raghothamachar, Journal of Electronic Materials Materials SciencePrismatic SlipEngineeringCrystal Growth TechnologyApplied Physics	2016	32
Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications St.G. Müller, Edward Sanchez, David M. Hansen, Journal of Crystal Growth Materials EngineeringSemiconductor TechnologyHigh Quality SicEngineeringVolume Production	2011	29
Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC H. Wang, Fangzhen Wu, Shayan Byrappa, Applied Physics Letters Materials ScienceSemiconductor TechnologyTed SegmentsEdge DislocationsEngineering	2012	28
Simulation of Grazing-Incidence Synchrotron X-ray Topographic Images of Threading c+a Dislocations in 4H-SiC Fangzhen Wu, Shayan Byrappa, Huanhuan Wang, MRS Proceedings EngineeringDislocation InteractionPhysicsThreading C+a DislocationsMechanical Engineering	2012	28
Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a Michael Dudley, Huan Huan Wang, Fangzhen Wu, Materials science forum EngineeringSevere Plastic DeformationMechanical EngineeringNew GenerationDefect Tolerance	2011	27
Origin of basal plane bending in hexagonal silicon carbide single crystals J.W. Lee, Marek Skowroński, Edward Sanchez, Journal of Crystal Growth Materials ScienceEngineeringApplied PhysicsCondensed Matter PhysicsBasal Plane Bending	2008	25

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