Publication | Closed Access
Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications
29
Citations
18
References
2011
Year
Materials EngineeringSemiconductor TechnologyHigh Quality SicEngineeringVolume ProductionApplied PhysicsDefect TrendsSemiconductor Device FabricationEpitaxial GrowthCarbide
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