H. Yin

Strain relaxation of SiGe islands on compliant oxide

H. Yin, Rui Huang, Karl D. Hobart et al. · Journal of Applied Physics · 2002 · 75 citations

Natural Sciences, Materials Engineering, Materials Science +15

Relaxation of compressed elastic islands on a viscous layer

J.-Q. Liang, Rui Huang, H. Yin et al. · Acta Materialia · 2002 · 44 citations

Engineering, Mechanical Engineering, Fluid Dynamics +13

High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm 2 SRAM and ultra low-k back end with eleven levels of copper

B. Greene, Qingqing Liang, K. Amarnath et al. · Symposium on VLSI Technology · 2006 · 40 citations

Engineering, Computer Engineering, Electrical Engineering +15

Strain partition of Si/SiGe and SiO2/SiGe on compliant substrates

H. Yin, Karl D. Hobart, Fritz J. Kub et al. · Applied Physics Letters · 2003 · 33 citations

Natural Sciences, Materials Engineering, Materials Science +17

Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates

K. L. Saenger, J. P. de Souza, Keith Fogel et al. · Applied Physics Letters · 2005 · 32 citations

Engineering, Materials Engineering, Materials Science +17