High-resolution focused ion beam lithography

Shinji Matsui, Yoshikatsu Kojima, Yukinori Ochiai

Applied Physics Letters

Proximity Effect MeasurementIon Beam LithographyEngineeringBeam LithographyPhysics +10

High-resolution focused ion beam lithography

Shinji Matsui, Yoshikatsu Kojima, Yukinori Ochiai, +1

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Ion Beam LithographyEngineeringElectron-beam LithographyMicroscopyFib Lithography +14

8/10 modulation codes for digital magnetic recording

Shoji Fukuda, Yoshikatsu Kojima, Yoshihide Shimpuku, +1

IEEE Transactions on Magnetics

MagnetismModulationDigital Magnetic RecordingEngineeringMagnetic Data Storage +8

Superconducting Lines Fabricated from Epitaxial Y-Ba-Cu-O Films

H. Tsuge, Shinji Matsui, N. Matsukura, +2

Japanese Journal of Applied Physics

Materials ScienceFocused Ion-beam LithographySuperconducting MaterialHigh-tc SuperconductivityEngineering +12

Focused ion beam processes for high-<i>T</i> <i>c</i> superconductors

S. Matsui, Y. Ochiai, Yoshikatsu Kojima, +7

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Materials ScienceIon ImplantationTc ControlEngineeringPhysics +12

EBDW technology for EB shuttle at 65nm node and beyond

Takashi Maruyama, Masaki Takakuwa, Yoshikatsu Kojima, +10

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Industrial DesignElectrical EngineeringPhysical Design (Electronics)EngineeringAdvanced Packaging (Semiconductors) +11

A stacked capacitor with an MOCVD-(Ba,Sr)TiO/sub 3/ film and a RuO/sub 2//Ru storage node on a TiN-capped plug for 4 Gbit DRAMs and beyond

Hisateru Yamaguchi, T. Iizuka, Hiroyuki Koga, +14

EngineeringHybrid CapacitorNanoelectronicsElectronic PackagingThin Film Processing +15

High-resolution focused ion beam lithography

Shinji Matsui, Yoshikatsu Kojima, Yukinori Ochiai, +2

Microelectronic Engineering

Ion Beam LithographyEngineeringElectron-beam LithographyPhysicsMicrofabrication +4

1G DRAM cell with diagonal bit-line (DBL) configuration and edge operation MOS (EOS) FET

Kentaro Shibahara, H. Mori, Shuhei Ohnishi, +9

Non-volatile MemoryElectrical EngineeringEngineeringEmerging Memory TechnologyApplied Physics +10

Direct writing through resist exposure using a focused ion beam system

Yukinori Ochiai, Yoshikatsu Kojima, S. Matsui

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Optical MaterialsEngineeringElectron-beam LithographyResist ExposureIon Beam Instrumentation +15