Serguei I. Maximenko

Author

Also Known As

Serguei I. Maximenko, Serguei Maximenko

Publications

219

Citations

H-Index

Concepts

All Affiliations

Serguei I. Maximenko is an author at United States Naval Research Laboratory specializing in applied physics, engineering, and materials science.

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	193
2	Applied Physics	5	5	193
3	Electrical Engineering	2	2	96
4	Materials Engineering	2	2	84
5	Natural Sciences	1	1	27

Serguei I. Maximenko

Publications

193

Citations

H-Index

Page 1

	Year	Citations
Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers Serguei I. Maximenko, Jaime A. Freitas, P. B. Klein, Applied Physics Letters Materials EngineeringElectrical Engineering4H-sic Homoepitaxial LayersEngineeringEpitaxial Growth	2009	69
Growth of Sn-Doped β-Ga<sub>2</sub>O<sub>3</sub> Nanowires and Ga<sub>2</sub>O<sub>3</sub>−SnO<sub>2</sub> Heterostructures for Gas Sensing Applications Lena Mazeina, Yoosuf N. Picard, Serguei I. Maximenko, Crystal Growth & Design Engineeringβ-Ga2o3 Thin FilmsGas SensorGa2o3−sno2 HsOptoelectronic Devices	2009	55
Investigation of the electrical activity of partial dislocations in SiC p-i-n diodes Serguei I. Maximenko, Pirouz Pirouz, Tangali S. Sudarshan Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringPartial DislocationsEngineering	2005	27
Differences in emission spectra of Si- and C-core partial dislocations Kendrick X. Liu, Robert E. Stahlbush, Serguei I. Maximenko, Applied Physics Letters EngineeringSilicon On InsulatorDefect ToleranceIi-vi SemiconductorEmission Spectra	2007	27
CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers Serguei I. Maximenko, Jaime A. Freitas, Yoosuf N. Picard, Materials science forum Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringDislocation Interaction	2010	15

Page 1