Serguei I. Maximenko

Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

Serguei I. Maximenko, Jaime A. Freitas, P. B. Klein et al. · Applied Physics Letters · 2009 · 69 citations

Materials Engineering, Electrical Engineering, 4H-sic Homoepitaxial Layers +14

Growth of Sn-Doped β-Ga₂O₃ Nanowires and Ga₂O₃−SnO₂ Heterostructures for Gas Sensing Applications

Lena Mazeina, Yoosuf N. Picard, Serguei I. Maximenko et al. · Crystal Growth & Design · 2009 · 55 citations

Engineering, β-Ga2o3 Thin Films, Gas Sensor +16

Investigation of the electrical activity of partial dislocations in SiC p-i-n diodes

Serguei I. Maximenko, Pirouz Pirouz, Tangali S. Sudarshan · Applied Physics Letters · 2005 · 27 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Differences in emission spectra of Si- and C-core partial dislocations

Kendrick X. Liu, Robert E. Stahlbush, Serguei I. Maximenko et al. · Applied Physics Letters · 2007 · 27 citations

Engineering, Silicon On Insulator, Defect Tolerance +17

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

Serguei I. Maximenko, Jaime A. Freitas, Yoosuf N. Picard et al. · Materials science forum · 2010 · 15 citations

Materials Engineering, Materials Science, Epitaxial Growth +14