Tangali S. Sudarshan

Author

University of South Carolina

Also Known As

Sudarshan, Tangali S., Tangali S Sudarshan, Tangali S. Sudarshan, Tangali Sudarshan

146

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

University of South Carolina United States Naval Research Laboratory

About

Tangali S. Sudarshan is an author at University of South Carolina specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	37	931
2	Applied Physics	19	36	919
3	Electrical Engineering	16	17	549
4	Chemistry	1	1	38
5	Computer Engineering	1	1	12

Tangali S. Sudarshan

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Tunable Reverse‐Biased Graphene/Silicon Heterojunction Schottky Diode Sensor Amol Singh, Md. Ahsan Uddin, Tangali S. Sudarshan, Small	2013	149
Micro/nanoscale mechanical and tribological characterization of SiC for orthopedic applications Xiaodong Li, Xinnan Wang, Robert T. Bondokov, Journal of Biomedical Materials Research Part B Applied Biomaterials	2004	102
Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers Serguei I. Maximenko, Jaime A. Freitas, P. B. Klein, Applied Physics Letters Materials EngineeringElectrical Engineering4H-sic Homoepitaxial LayersEngineeringEpitaxial Growth	2009	69
The Effect of Cuprous Oxide Coatings on Surface Flashover of Dielectric Spacers in Vacuum J.D. Cross, Tangali S. Sudarshan IEEE Transactions on Electrical Insulation DielectricsEngineeringGlow DischargeCuprous OxideSurface Flashover	1974	56
Functionalized graphene/silicon chemi-diode H<sub>2</sub> sensor with tunable sensitivity Md Ahsan Uddin, Amol Singh, Tangali S. Sudarshan, Nanotechnology	2014	56
Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors Krishna C. Mandal, Ramesh M. Krishna, Peter G. Muzykov, IEEE Transactions on Nuclear Science Semi-insulating 4HEngineeringIntegrated CircuitsSemiconductor DeviceSemiconductors	2011	56
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor Iftekhar Chowdhury, MVS Chandrasekhar, P. B. Klein, Journal of Crystal Growth Materials EngineeringEngineeringHot-wall Cvd ReactorApplied PhysicsChemical Vapor Deposition	2010	48
Interface Trap-Induced Nonideality in As-Deposited Ni/4H-SiC Schottky Barrier Diode Sabih U. Omar, Tangali S. Sudarshan, Tawhid Rana, IEEE Transactions on Electron Devices Semiconductor TechnologyHysteresis PatternsElectrical EngineeringInterface Trap-induced NonidealityEngineering	2014	45
Investigation on barrier inhomogeneities in 4H‐SiC Schottky rectifiers Xianyun Ma, Priyamvada Sadagopan, Tangali S. Sudarshan physica status solidi (a) SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2006	39
Clustering Effects on Discontinuous Gold Film NanoCells Jorge M. Seminario, Yuefei Ma, Luis A. Agapito, Journal of Nanoscience and Nanotechnology Materials ScienceOrganic MoleculesNanoscale SystemEngineeringNanoscale Chemistry	2004	38

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