M. ter Beek

Femtosecond carrier-induced screening of dc electric-field-induced second-harmonic generation at the Si(001)–SiO_2 interface

Jerry I. Dadap, P.T. Wilson, Mark Anderson et al. · Optics Letters · 1997 · 52 citations

Engineering, Silicon On Insulator, Semiconductor Device +17

Comparison of ESD protection capability of lateral BJT, SCR and bidirectional. SCR for hi-voltage BiCMOS circuits

A. Concannon, M. ter Beek, P. Hopper · 2003 · 35 citations

Electrical Engineering, Engineering, High Voltage Engineering +9

ESD protection of double-diffusion devices in submicron CMOS processes

A. Concannon, P. Hopper, M. ter Beek · 2004 · 23 citations

Electrical Engineering, Engineering, Double Diffusion 12 +9

Turn-off characteristics of the CMOS snapback ESD protection devices - new insights and its implications

В.А. Ващенко, Mirko Scholz, Ph. Jansen et al. · 2006 · 17 citations

Hardware Security, Turn-off Characteristics, Electrical Engineering +8

Implementation of 60V tolerant dual direction ESD protection in 5V BiCMOS process for automotive application

W.J. Kindt, M. ter Beek, P. Hopper · 2004 · 16 citations

Electrical Engineering, Engineering, Vlsi Design +7