M. ter Beek - Concepedia

Author

M. ter Beek

Texas Instruments (United States)

Also Known As

M. Ter Beek, M. ter Beek, M.T. Beek, Marcel ter Beek

Publications

334

Citations

H-Index

Concepts

All Affiliations

Texas Instruments (United States)IMEC

About

M. ter Beek is an author at Texas Instruments (United States) specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	216
2	Electrical Engineering	10	11	216
3	Applied Physics	4	4	102
4	Computer Engineering	4	4	54
5	Natural Sciences	1	1	52

M. ter Beek

Publications

216

Citations

H-Index

Page 1

	Year	Citations
Femtosecond carrier-induced screening of dc electric-field-induced second-harmonic generation at the Si(001)–SiO_2 interface Jerry I. Dadap, P.T. Wilson, Mark Anderson, Optics Letters EngineeringSilicon On InsulatorSemiconductor DeviceIi-vi SemiconductorDc Electric Field	1997	52
Comparison of ESD protection capability of lateral BJT, SCR and bidirectional. SCR for hi-voltage BiCMOS circuits A. Concannon, M. ter Beek, P. Hopper Electrical EngineeringEngineeringHigh Voltage EngineeringHi-voltage Bicmos CircuitsEsd Protection Capability	2003	35
ESD protection of double-diffusion devices in submicron CMOS processes A. Concannon, P. Hopper, M. ter Beek Electrical EngineeringEngineeringDouble Diffusion 12Advanced Packaging (Semiconductors)Nanoelectronics	2004	23
Turn-off characteristics of the CMOS snapback ESD protection devices - new insights and its implications В.А. Ващенко, Mirko Scholz, Ph. Jansen, Hardware SecurityTurn-off CharacteristicsElectrical EngineeringEngineeringHigh Voltage Engineering	2006	17
Implementation of 60V tolerant dual direction ESD protection in 5V BiCMOS process for automotive application W.J. Kindt, M. ter Beek, P. Hopper Electrical EngineeringEngineeringVlsi DesignThin Film ResistorsV Bicmos Process	2004	16
ESD protection window targeting using LDMOS-SCR devices with PWELL-NWELL super-junction M. ter Beek Low-power ElectronicsExtended DrainElectrical EngineeringEngineeringVlsi Design	2005	14
LVTSCR structures for latch-up free ESD protection of BiCMOS RF circuits A. Concannon, M. ter Beek, P. Hopper Microelectronics Reliability Electrical EngineeringBicmos Rf CircuitsEngineeringCircuit SystemLvtscr Structures	2003	13
Dopant profile control and metrology requirements for sub-0.5 μm metal–oxide–semiconductor field-effect transistors Michael Duane, Peter Nunan, M. ter Beek, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringDopant Profiles	1996	13
A device level negative feedback in the emitter line of SCR-structures as a method to realize latch-up free ESD protection A. Concannon, M. ter Beek, P. Hopper Electrical EngineeringEfficient Design SolutionEngineeringCircuit SystemAvalanche-injection Conductivity Modulation	2003	13
Technology CAD evaluation of BiCMOS protection structures operation including spatial thermal runaway В.А. Ващенко, A. Concannon, M. ter Beek, Electrical EngineeringEngineeringThermal ProtectionEsd OperationBias Temperature Instability	2002	10

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