Andrei Vladimirescu

An analysis on the ambipolar current in Si double-gate tunnel FETs

Hraziia, Andrei Vladimirescu, Amara Amara et al. · Solid-State Electronics · 2012 · 211 citations

Device Modeling, Electrical Engineering, Engineering +6

SRAM leakage suppression by minimizing standby supply voltage

Yu Cao, Dejan Marković, Andrei Vladimirescu et al. · 2004 · 205 citations

Low-power Electronics, Hardware Security, Electrical Engineering +13

Tunnel field effect transistor with increased ON current, low-k spacer and high-k dielectric

Costin Anghel, Prathyusha Chilagani, Amara Amara et al. · Applied Physics Letters · 2010 · 138 citations

Low-k Spacer, Electrical Engineering, High-k Gate Dielectric +12

30-nm Tunnel FET With Improved Performance and Reduced Ambipolar Current

Costin Anghel, Hraziia, Anju Gupta et al. · IEEE Transactions on Electron Devices · 2011 · 136 citations

Device Modeling, Semiconductors, Electrical Engineering +14

Nonlinear transformer model for circuit simulation

J.H.K. Chan, Andrei Vladimirescu, Xiaohui Gao et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1991 · 125 citations

Electrical Engineering, Nonlinear Core, Engineering +14