H. M. Shieh - Concepedia

Author

H. M. Shieh

National Cheng Kung University

Also Known As

H. M. Shieh, H.-M. Shieh, H.M Shieh, H.M. Shieh, Hir-Ming Shieh

Publications

281

Citations

H-Index

Concepts

All Affiliations

National Cheng Kung University Kun Shan University

About

H. M. Shieh is an author at National Cheng Kung University specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	13	199
2	Applied Physics	11	13	199
3	Electrical Engineering	11	13	199
4	Physics	3	3	43
5	Condensed Matter Physics	2	2	22

H. M. Shieh

Publications

215

Citations

H-Index

Page 1

	Year	Citations
High performance symmetric double δ-doped GaAs/InGaAs/GaAs pseudomorphic HFETs grown by MOCVD Wei‐Chou Hsu, H. M. Shieh, Chang-Luen Wu, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1994	23
Very high two-dimensional electron gas concentrations with enhanced mobilities in selectively double-δ-doped GaAs/InGaAs pseudomorphic single quantum well heterostructures H. M. Shieh, W. C. Hsu, Chunyi Wu Applied Physics Letters SemiconductorsQuantum ScienceElectrical EngineeringElectronic DevicesIngaas Channel	1993	21
A novel /spl delta/-doped GaAs/lnGaAs real-space transfer transistor with high peak-to-valley ratio and high current driving capability Chang-Luen Wu, Wei-Chou Hsu, H. M. Shieh, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1995	21
On the improvement of gate voltage swings in delta -doped GaAs/In/sub x/Ga/sub 1-x/As/GaAs pseudomorphic heterostructures W. C. Hsu, H. M. Shieh, M.-J. Kao, IEEE Transactions on Electron Devices SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	1993	18
Characterization of high performance inverted delta-modulation-doped (IDMD) GaAs/InGaAs pseudomorphic heterostructure FET's Wei‐Chou Hsu, Chang-Luen Wu, Ming-Shang Tsai, IEEE Transactions on Electron Devices SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	1995	17
In 0.34 Al 0.66 As 0.85 Sb 0.15 /δ(n + )- InP heterostructure field-effect transistors Y. S. Lin, W. C. Hsu, Chia-Yen Yeh, Applied Physics Letters	2000	16
Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's Ming-Jer Kao, H. M. Shieh, Wei-Chou Hsu, IEEE Transactions on Electron Devices SemiconductorsElectron Transfer CharacteristicsElectrical EngineeringProposed StructuresEngineering	1996	16
A high-performance delta -doped GaAs/In/sub x/Ga/sub 1-x/As pseudomorphic high electron mobility transistor utilizing a graded In/sub x/Ga/sub 1-x/As channel H. M. Shieh, Wei‐Chou Hsu, Rong-Tay Hsu, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1993	16
Influences of δ -doping time and spacer thickness on the mobility and two-dimensional electron gas concentration in δ -doped GaAs/InGaAs/GaAs pseudomorphic heterostructures H. M. Shieh, W. C. Hsu, Ming‐Jer Kao, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesGaas/ingaas/gaas Pseudomorphic Heterostructures	1994	12
Mobility enhancement in double δ-doped GaAs/In<i>x</i>Ga1−<i>x</i>As/GaAs pseudomorphic structures by grading the heterointerfaces Chunyi Wu, Wei Hsu, H. M. Shieh, Applied Physics Letters EngineeringIngaas Quantum WellsOptoelectronic DevicesSemiconductorsElectronic Devices	1994	12

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