IEEE Transactions on Electron Devices · 1993 · 18 citations · 12 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionDopingIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsHeterostructure DesignHeterostructure DevicesHeterostructure MaterialsHeterostructure TransistorsHeterostructuresLow-pressure Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionTransconductance
Significant improvements in gate voltage swings in heterostructures prepared by low-pressure metalorganic chemical vapor deposition are discussed. Structures utilizing a compositionally graded In/sub x/Ga/sub 1-x/As channel exhibited a very flat transconductance region of 2 V. The gate voltage swings of single and double delta -doped GaAs/In/sub 0.25/Ga/sub 0.75/As/GaAs structures were 2.5 and 2.8 V, respectively. All structures also exhibited high extrinsic transconductance as well as high saturation current densities.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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