High performance symmetric double δ-doped GaAs/InGaAs/GaAs pseudomorphic HFETs grown by MOCVD

Abstract

High performance double /spl delta/-doped GaAs/In/sub 0.25/Ga/sub 0.75/ As/GaAs pseudomorphic HFETs grown by low pressure MOCVD are reported. An extrinsic transconductance as high as 390 mS/mm, and a saturation current density as high as 980 mA/mm along with broad transconductance plateau at 300 K with a 1.5 /spl mu/m gate length, are achieved.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>