R.J. Welty - Concepedia

Author

R.J. Welty

University of California San Diego

Also Known As

R J Welty, R Welty, R. J. Welty, R. Welty, R.J Welty, R.J. Welty, Rebecca J. Welty, Rebecca Welty, Welty, R.J.

Publications

473

Citations

H-Index

Concepts

All Affiliations

University of California San Diego Lawrence Livermore National Laboratory Kopin Corporation (United States)Hitachi (Japan)

About

R.J. Welty is an author at University of California San Diego specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	15	384
2	Applied Physics	12	13	292
3	Electrical Engineering	12	12	328
4	Health Sciences	2	2	29
5	Materials Science	2	2	42

R.J. Welty

Publications

432

Citations

H-Index

Page 1

	Year	Citations
Monolithically integrated InP-based photonic chip development for O-CDMA systems Ji Chen, R.G. Broeke, Yuanqi Du, IEEE Journal of Selected Topics in Quantum Electronics PhotonicsElectrical EngineeringEngineeringDevice IntegrationIntegrated Photonics	2005	61
Heterojunction bipolar transistors implemented with GaInNAs materials P.M. Asbeck, R.J. Welty, C. W. Tu, Semiconductor Science and Technology SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2002	50
GaN 0.011 P 0.989 red light-emitting diodes directly grown on GaP substrates H. P. Xin, R.J. Welty, C. W. Tu Applied Physics Letters Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesGap Transparent SubstrateGap Substrate	2000	38
Fabrication and characterisation of enhanced barrierAlGaN/GaN HFET X. Z. Dang, R.J. Welty, D. Qiao, Electronics Letters	1999	38
Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications Pin-Fan Chen, U.-M.T. Hsin, R.J. Welty, IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringEngineeringRf SemiconductorElectronic EngineeringPower Semiconductor Device	1999	31
Nanofabrication of optical structures and devices for photonics and biophotonics Robert W. Boyd, John E. Heebner, N.N. Lepeshkin, Journal of Modern Optics Artificial MaterialsOptical MaterialsEngineeringNano-opticsMetasurfaces	2003	27
GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers N. Pan, S.J. Whitney, Roger E. Welser, IEEE Transactions on Electron Devices Electrical EngineeringHigh-efficiency High-power AmplifiersEngineeringIon ImplantationRf Semiconductor	2000	25
GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage R.J. Welty, H. P. Xin, Kazuhiro Mochizuki, Solid-State Electronics Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsLow Turn-on Voltage	2002	24
Porous silicon technology for RF integrated circuit applications R.J. Welty, Sehyun Park, P.M. Asbeck, Electrical EngineeringPorous Silicon TechnologyEngineeringRf SemiconductorAdvanced Packaging (Semiconductors)	2002	24
X-ray detection by direct modulation of an optical probe beam—Radsensor: Progress on development for imaging applications Mark Lowry, Corey V. Bennett, S. P. Vernon, Review of Scientific Instruments Optical MaterialsX-ray SpectroscopyEngineeringMicroscopyX-ray Imagers	2004	17

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