M. J. Bevan - Concepedia

Author

M. J. Bevan

Texas Instruments (United States)

Also Known As

M. Bevan, M. J. Bevan, M.J. Bevan, Malcolm Bevan, Malcolm J. Bevan

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Texas Instruments (United States)Westinghouse Electric (United States)University of North Texas Pennsylvania State University Indian Institute of Technology Bombay

About

M. J. Bevan is an author at Texas Instruments (United States) specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	36	1.1K
2	Applied Physics	14	30	762
3	Chemistry	11	14	452
4	Chemical Engineering	5	5	273
5	Natural Sciences	4	4	54

M. J. Bevan

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide Ryan C. Smith, Tiezhong Ma, Noel Hoilien, Advanced Materials for Optics and Electronics EngineeringVacuum DeviceChemistryChemical DepositionChemical Engineering	2000	143
CMOS metal replacement gate transistors using tantalum pentoxide gate insulator Amitava Chatterjee, R. A. Chapman, K. Joyner, Electrical EngineeringEngineeringNanoelectronicsBias Temperature InstabilityOxide Electronics	2002	71
Composition control of Hf1−xSixO2 films deposited on Si by chemical-vapor deposition using amide precursors B. C. Hendrix, A. S. Borovik, Chen Xu, Applied Physics Letters EngineeringHafnium SilicateHf1−xsixo2 FilmsThin Film Process TechnologyChemistry	2002	65
Advanced CMOS transistors with a novel HfSiON gate dielectric Antonio Rotondaro, M. R. Visokay, James J. Chambers, Materials SciencePoly SiElectrical EngineeringSemiconductor DeviceEngineering	2003	60
HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation K. Joshi, Shih‐Ya Hung, Subhadeep Mukhopadhyay, Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringAdvanced Packaging (Semiconductors)	2013	60
Interdiffusion studies for HfSixOy and ZrSixOy on Si Manuel Quevedo-López, M. El-Bouanani, Bruce E. Gnade, Journal of Applied Physics EngineeringSilicon On InsulatorMetal IncorporationNanoelectronicsSilicene	2002	51
Boron penetration studies from p+ polycrystalline Si through HfSixOy Manuel Quevedo-López, M. El-Bouanani, M. J. Kim, Applied Physics Letters Materials EngineeringMaterials ScienceHfsixoy CrystallizationB DiffusionEngineering	2002	47
A photoluminescence comparison of CdTe thin films grown by molecular-beam epitaxy, metalorganic chemical vapor deposition, and sputtering in ultrahigh vacuum Zhe Chuan Feng, M. J. Bevan, S. V. Krishnaswamy, Journal of Applied Physics Optical MaterialsEngineeringUltrahigh VacuumPhotoluminescence ComparisonSemiconductor Nanostructures	1988	44
Stability of zirconium silicate films on Si under vacuum and O2 annealing Jonder Morais, E. B. O. da Rosa, L. Miotti, Applied Physics Letters Materials EngineeringMaterials ScienceChemical EngineeringZirconium Silicate FilmsEngineering	2001	43
The desorption of chemisorbed oxygen from activated carbons and its relationship to ageing and methyl iodide retention efficiency B. H. M. Billinge, Josephine B. Docherty, M. J. Bevan Carbon Chemical EngineeringEnvironmental ChemistryChemisorbed OxygenEngineeringChemisorption	1984	40

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