M. J. Bevan

Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide

Ryan C. Smith, Tiezhong Ma, Noel Hoilien et al. · Advanced Materials for Optics and Electronics · 2000 · 143 citations

Engineering, Vacuum Device, Chemistry +16

CMOS metal replacement gate transistors using tantalum pentoxide gate insulator

Amitava Chatterjee, R. A. Chapman, K. Joyner et al. · 2002 · 71 citations

Electrical Engineering, Engineering, Nanoelectronics +8

Composition control of Hf1−xSixO2 films deposited on Si by chemical-vapor deposition using amide precursors

B. C. Hendrix, A. S. Borovik, Chen Xu et al. · Applied Physics Letters · 2002 · 65 citations

Engineering, Hafnium Silicate, Hf1−xsixo2 Films +16

Advanced CMOS transistors with a novel HfSiON gate dielectric

Antonio Rotondaro, M. R. Visokay, James J. Chambers et al. · 2003 · 60 citations

Materials Science, Poly Si, Electrical Engineering +13

HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation

K. Joshi, Shih‐Ya Hung, Subhadeep Mukhopadhyay et al. · 2013 · 60 citations

Materials Science, Materials Engineering, Electrical Engineering +15