Noel Hoilien

Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide

Ryan C. Smith, Tiezhong Ma, Noel Hoilien et al. · Advanced Materials for Optics and Electronics · 2000 · 144 citations

Natural Sciences, Materials Engineering, Materials Science +17

Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

Tiezhong Ma, Stephen A. Campbell, Ryan C. Smith et al. · IEEE Transactions on Electron Devices · 2001 · 57 citations

Engineering, Materials Engineering, Materials Science +17

Low Temperature Chemical Vapor Deposition of ZrO[sub 2] on Si(100) Using Anhydrous Zirconium (IV) Nitrate

Ryan C. Smith, Noel Hoilien, C. James Taylor et al. · Journal of The Electrochemical Society · 2000 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +17

Combinatorial Chemical Vapor Deposition of Metal Dioxides Using Anhydrous Metal Nitrates

Ryan C. Smith, Noel Hoilien, Jeff Roberts et al. · Chemistry of Materials · 2002 · 29 citations

Natural Sciences, Materials Engineering, Materials Science +16

Combinatorial Chemical Vapor Deposition. Achieving Compositional Spreads of Titanium, Tin, and Hafnium Oxides by Balancing Reactor Fluid Dynamics and Deposition Kinetics

Ryan C. Smith, Noel Hoilien, Jimmy Chien et al. · Chemistry of Materials · 2002 · 29 citations

Natural Sciences, Materials Engineering, Materials Science +14