J. Symons

Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane

Kris Baert, J. Symons, W. Vandervorst et al. · Applied Physics Letters · 1987 · 28 citations

Semiconductors, Materials Science, Electrical Engineering +13

Silicon heterojunction bipolar transistors with amorphous and microcrystalline emitters

J. Symons, M Ghannam, A. Neugroschel et al. · Solid-State Electronics · 1987 · 21 citations

Electrical Engineering, Engineering, Applied Physics +2

The emitter-base interface current in silicon bipolar transistors with emitters deposited by plasma-enhanced CVD

J. Symons, Johan Nijs, R. Mertens · IEEE Transactions on Electron Devices · 1989 · 19 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +15

Low temperature plasma enhanced CVD of highly conductive single crystalline and polycrystalline silicon materials

J. Nijs, Kris Baert, J. Symons et al. · Applied Surface Science · 1989 · 10 citations

Materials Science, Engineering, Conductive Single Crystalline +8

The use of amorphous and microcrystalline silicon for silicon heterojunction bipolar transistors

J. Symons, M Ghannam, J. Nijs et al. · Applied Physics A · 1986 · 10 citations

Electrical Engineering, Engineering, Microfabrication +5