Hans‐Joachim L. Gossmann

Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond

Bingxi Wood, Fareen Adeni Khaja, B. Colombeau et al. · ECS Transactions · 2013 · 28 citations

Electrical Engineering, Engineering, Finfet Device Structure +10

Advanced<scp>CMOS</scp>devices: Challenges and implant solutions

B. Colombeau, B. N. Guo, Hans‐Joachim L. Gossmann et al. · physica status solidi (a) · 2013 · 25 citations

Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate

Aditya Agarwal, A. T. Fiory, Hans‐Joachim L. Gossmann et al. · Materials Science in Semiconductor Processing · 1998 · 20 citations

Materials Engineering, Electrical Engineering, Engineering +8

Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing

Hans‐Joachim L. Gossmann · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2008 · 13 citations

Engineering, Junction Formation, Thermal Processing +23

Bulk FinFET junction isolation by heavy species and thermal implants

Fareen Adeni Khaja, Hans‐Joachim L. Gossmann, B. Colombeau et al. · 2014 · 10 citations