Hans‐Joachim L. Gossmann

Author

Also Known As

Gossmann, Hans-Joachim Gossmann, Hans-Joachim L Gossmann, Hans-Joachim L. Gossmann, Hans‐Joachim Gossmann, Hans‐Joachim L. Gossmann

Publications

144

Citations

H-Index

Concepts

All Affiliations

Hans‐Joachim L. Gossmann is an author at Applied Materials (United States) specializing in engineering, applied physics, and nanoelectronics.

#	Concept	H-Index	Publications	Citations
1	Engineering	3	3	61
2	Applied Physics	3	3	61
3	Electrical Engineering	3	3	61
4	Materials Engineering	2	2	33
5	Materials Science	1	1	13

Hans‐Joachim L. Gossmann

Publications

Citations

H-Index

Page 1

	Year	Citations
Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond Bingxi Wood, Fareen Adeni Khaja, B. Colombeau, ECS Transactions Electrical EngineeringEngineeringFinfet Device StructureAdvanced Packaging (Semiconductors)Nanoelectronics	2013	28
Advanced<scp>CMOS</scp>devices: Challenges and implant solutions B. Colombeau, B. N. Guo, Hans‐Joachim L. Gossmann, physica status solidi (a)	2013	25
Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate Aditya Agarwal, A. T. Fiory, Hans‐Joachim L. Gossmann, Materials Science in Semiconductor Processing Materials EngineeringElectrical EngineeringEngineeringSpike AnnealingNanoelectronics	1998	20
Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing Hans‐Joachim L. Gossmann Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringJunction FormationThermal ProcessingSilicon On InsulatorIon Implantation	2008	13
Bulk FinFET junction isolation by heavy species and thermal implants Fareen Adeni Khaja, Hans‐Joachim L. Gossmann, B. Colombeau,	2014	10

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