Fareen Adeni Khaja - Concepedia

Author

Fareen Adeni Khaja

Applied Materials (United States)

Also Known As

F. A. Khaja, F. Khaja, F.-A. Khaja, F.A. Khaja, Fareen Adeni Khaja, Fareen Khaja

Publications

325

Citations

H-Index

Concepts

All Affiliations

Applied Materials (United States)KU Leuven IMEC Fudan University

About

Fareen Adeni Khaja is an author at Applied Materials (United States) specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	184
2	Applied Physics	6	6	184
3	Electrical Engineering	6	6	184
4	Natural Sciences	2	2	65
5	Materials Engineering	2	2	58

Fareen Adeni Khaja

Publications

253

Citations

H-Index

Page 1

	Year	Citations
Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes Chi‐Nung Ni, K. V. Rao, Fareen Adeni Khaja, EngineeringLaser AnnealOptoelectronic DevicesPost 7Silicon On Insulator	2016	39
Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation Hao Yu, Marc Schaekers, Andriy Hikavyy, Materials EngineeringMaterials ScienceElectrical EngineeringPma TemperatureEngineering	2016	34
Sub-10<sup>−9</sup> Ω·cm<sup>2</sup> contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation J-L. Everaert, Marc Schaekers, Hao Yu, EngineeringNuclear PhysicsNanosecond Laser ActivationLaser ApplicationsLaser Material	2017	31
Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond Bingxi Wood, Fareen Adeni Khaja, B. Colombeau, ECS Transactions Electrical EngineeringEngineeringFinfet Device StructureAdvanced Packaging (Semiconductors)Nanoelectronics	2013	28
Drain current variability and MOSFET parameters correlations in planar FDSOI technology J. Mazurier, O. Weber, F. Andrieu, Sub XmlnsEngineeringPlanar Fdsoi TechnologyMosfet Parameters CorrelationsDrain Current Variability	2011	28
Advanced<scp>CMOS</scp>devices: Challenges and implant solutions B. Colombeau, B. N. Guo, Hans‐Joachim L. Gossmann, physica status solidi (a)	2013	25
Physical understanding of cryogenic implant benefits for electrical junction stability Fareen Adeni Khaja, B. Colombeau, Thirumal Thanigaivelan, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringNanoelectronics	2012	24
Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10<sup>−10</sup>Ω·cm<sup>2</sup>contact resistivity achieved on Ga doped Ge using nanosecond laser activation Lin‐Lin Wang, Hao Yu, Marc Schaekers,	2017	24
Bulk FinFET junction isolation by heavy species and thermal implants Fareen Adeni Khaja, Hans‐Joachim L. Gossmann, B. Colombeau,	2014	10
PMOS contact resistance solution compatible to CMOS integration for 7 nm node and beyond Chi‐Nung Ni, Yongbing Huang, Sung Chan Jun,	2016	10

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