B. Mizuno

New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma

B. Mizuno, Ichiro Nakayama, Nobuo Aoi et al. · Applied Physics Letters · 1988 · 129 citations

Electrical Engineering, Plasma Electronics, Engineering +9

Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements

Kazuo Tsutsui, Toru Matsuda, Masamitsu Watanabe et al. · Journal of Applied Physics · 2008 · 49 citations

Engineering, Cubic Boron Nitride, Chemistry +18

A 0.05 μm-CMOS with ultra shallow source/drain junctions fabricated by 5 keV ion implantation and rapid thermal annealing

Atsushi Hori, H. Nakaoka, H. Umimoto et al. · 2002 · 37 citations

Low-power Electronics, Electrical Engineering, Semiconductor Device +13

PLASMA DOPING : PROGRESS AND POTENTIAL

Paul K. Chu, Susan B. Felch, Peter L. Kellerman et al. · Solid State Technology · 1999 · 23 citations

Engineering, Applied Physics, Plasma Physics +4

Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam

Akira Uedono, Kazuo Tsutsui, Shoji Ishibashi et al. · Japanese Journal of Applied Physics · 2010 · 22 citations

Ion Implantation, Engineering, Crystalline Defects +12