J. E. Ehret - Concepedia

Author

J. E. Ehret

Wright-Patterson Air Force Base

Also Known As

J. E. Ehret, J.E. Ehret, James E. Ehret, James Ehret

Publications

291

Citations

H-Index

Concepts

All Affiliations

Wright-Patterson Air Force Base Therapeutics Systems Research Laboratories (United States)Ripple (United States)U.S. Air Force Institute of Technology United States Air Force Research Laboratory

About

J. E. Ehret is an author at Wright-Patterson Air Force Base specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	225
2	Applied Physics	9	9	225
3	Electrical Engineering	7	7	149
4	Materials Science	6	6	147
5	Physics	2	2	74

J. E. Ehret

Publications

243

Citations

H-Index

Page 1

	Year	Citations
Surface chemistry evolution during molecular beam epitaxy growth of InGaAs K. R. Evans, R. Kaspi, J. E. Ehret, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceSemiconductorsEngineeringCrystalline DefectsPhysics	1995	51
Electroluminescence and photovoltaic detection in Cd-implanted CuInSe2 <i>p</i>-<i>n</i> junction diodes Phil Won Yu, Y. S. Park, S. P. Faile, Applied Physics Letters EngineeringSemiconductor MaterialsTypical DiodesOptoelectronic DevicesPhotovoltaics	1975	47
Incorporation/desorption rate variation at heterointerfaces in III–V molecular-beam epitaxy K. R. Evans, C. E. Stutz, E. N. Taylor, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsMaterials ScienceEngineeringCrystalline DefectsSurface Science	1991	25
Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs Kalyan Kumar Chattopadhyay, J. L. Aubel, Senthilarasu Sundaram, Journal of Applied Physics Materials ScienceElectrical EngineeringMbe Shutter OperationEngineeringEpitaxial Growth	1997	23
Amphoteric behavior of Ge implants in GaAs Y. K. Yeo, J. E. Ehret, Frank L. Pedrotti, Applied Physics Letters Room-temperature ImplantationEngineeringSemiconductor MaterialsOptoelectronic DevicesElectrical Properties	1979	22
Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements J. Hader, Aramais R. Zakharian, Jerome V. Moloney, IEEE Photonics Technology Letters PhotonicsElectrical EngineeringPhotoluminescenceEngineeringOptical Transmission System	2002	21
Substrate-dependent electrical properties of low-dose Si implants in GaAs Y. K. Yeo, R. L. Hengehold, Yong Yun Kim, Journal of Applied Physics	1985	18
Dual implantation of C and Ga ions into GaAs B. K. Shin, J. E. Ehret, Y. S. Park, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringIon ImplantationEngineering	1978	13
Hall-effect measurements in Cd-implanted GaAs B. K. Shin, D. C. Look, Y. S. Park, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesHall-effect Measurements	1976	13
Reduced power consumption in GaAs-based bipolar cascade lasers William J. Siskaninetz, J. E. Ehret, Tuoc Dang, Electronics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringPower ConsumptionEngineering	2002	10

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